The report on Radiation Sensing Field Effect Transistor (RADFETs) by Infinium Global Research analyses the Radiation Sensing Field Effect Transistor (RADFETs) Market over the period of 2016 to 2022. This report also provides detailed qualitative and quantitative analyses of the market dynamics, market size and future trends in Global Radiation Sensing Field Effect Transistor (RADFETs) Market. It will help a lot of decision makers to develop strategies and find new opportunities in the Global Radiation Sensing Field Effect Transistor (RADFETs) Market.
Radiation Sensing Field Effect Transistor RADFETs is based on the metal oxide silicon p-channel structure. RADFET is an integrating dosimeter that monitors dose of radiation (Gy) as a result of the field effect caused due to space charge trapped in an insulator. The RADFET dosimeters are used to measure ionizing radiation. The microscopic small sensor volume in RADFETs offer opportunities for invention of new portable and miniature radiation dosimeters. RADFET systems are gaining preferences over other radiation detection systems due to their compact systems and these detectors can easily be associated with computer power.
RADFETs market is broadly classified on the basis of product types, and applications. On the basis of product types the RADFETs market is segmented as Personal Dosimeters, Area Process Monitors, Radioactive Material Monitors and others including (Environmental Radiation Monitors, Surface Contamination Monitors). On the basis of applications the RADFETs market is segmented as medical, and non-medical applications. Globally, medical applications segment in the RADFETs market is anticipated to grow at the highest CAGR 5.3% over the forecast period.
Key topics covered:
2. Executive Summary
3. Global RADFETs Market Overview
4. Global RADFETs Market Analysis, by Type 2015 – 2022
5. Global RADFETs Market Analysis, by Application 2015 – 2022
6. Global RADFETs Market Analysis, by Region 2015 – 2022
7. Company Profiles