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MOCVD Equipment is Used to Produce Compound Semiconductors Which Stands for Metalorganic Chemical Vapor Deposition.

Pressmeddelande   •   Sep 19, 2019 14:03 CEST

MOCVD stands for Metalorganic Chemical Vapor Deposition. It is alternatively known as Metalorganic Vapor-Phase Epitaxy (MOVPE), as epitaxy means depositing a thin layer of atoms over a substrate. Atoms to be added to the crystal are passed over a heated semiconductor wafer in combination with organic gas molecules. Due to the heated wafer, it breaks down the molecules, and required atoms are deposited on the surface of the semiconductor wafer. In order to control the growth of these deposits, the process is carried out in a controlled environment.

MOCVD is used to create a thin film on semiconductor wafers. It is also called as Organo-Metallic Chemical Vapor Deposition (OMCVD). The thickness of the layer can be easily controlled by the MOCVD process, and therefore the demand MOCVD is increasing for the manufacture of electronic components such as diodes. The applications for power electronics is increasing, and this is resulting in high demand for MOCVD across the globe. In addition, rising government initiatives for the use of various power electronics are expected to support the growth of the global market. For instance, the Chinese government is offering a subsidy to promote the use of MOCVD equipment for the manufacture of electronic devices such as LED as the demand for LED lighting is on the rise.

Increasing use of MOCVD by semiconductor manufacturers to develop highly efficient photovoltaic cells or triple junction solar cells is expected to bolster the growth of the global MOCVD market. In addition, rising use of MOCVD in the manufacture of multilayer semiconductor structure used across optoelectronic or electronic equipment. The use of advanced MOCVD equipment in the manufacturing process of the semiconductor device increases performance, delivers high switching speed, and also increases efficiency. Furthermore, it is expected that the gallium nitride will replace silicon technology across the power semiconductor applications owing to its high thermal conductivity and high breakdown voltage. This is expected to support the growth of the target market during the forecast period.

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