IM Flash Singapore

Analyst: Intel-Micron NAND JV to ramp Asia fab

Press Release   •   Jan 27, 2010 07:18 +08

SAN JOSE, Calif. -- IM Flash Technologies LLC--a joint NAND flash venture between Intel Corp. and Micron Technology Inc.--is moving ahead with its delayed fab in Singapore.

IM Flash has previously announced an advanced, 300-mm fab in Singapore, but the venture has delayed the plant for business reasons. At present, the venture has a 300-mm fab running in Lehi, Utah.

''We believe that Micron is interested in increasing its market share position in NAND and is currently ordering tools for its Singapore fab,'' said Daniel Amir, an analyst with Lazard Capital Markets, in a report. ''The ramp-up which could start in 1H '11 has still not been determined due to Intel's lack of clarity on its strategy with this fab. Overall, in 2010 MU will remain the lowest-cost NAND producer in the market.''

Intel and Micron are also seeking to regain the lead in the NAND process technology race. Micron said that it will be ''shortly'' sampling a 2x-nm NAND device. It did not specify the exact node, but some expect the company will disclose more details in early 2010.