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Toshiba Develops World's First High-Speed, Low-Power, 1Xnm Size MTJ Element for Non-Volatile STT-MRAM For 2X nm Generation And Later Transistors

News   •   Jun 15, 2016 08:36 GMT

Toshiba Corporation has developed Magnetic Tunnel Junction (MTJ) elements for STT-MRAM non-volatile Magnetoresistive Random Access memory for 2X nm generation and beyond silicon transistors cache memory, required for future high-performance low-power-consumption computing.

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