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Global ferroelectric RAM market: 18% CAGR between 2012 and 2016

Press Release   •   Feb 25, 2013 11:26 GMT

The Global Ferroelectric RAM market is to grow at a CAGR of 18.2 percent over the period 2012-2016. One of the key factors contributing to this market growth is the high demand in wireless applications. The Global Ferroelectric RAM market has also been witnessing the increased investment in RandD. However, the time to market pressure could pose a challenge to the growth of this market.

The Global Ferroelectric random access memory (FRAM) market is witnessing the trend of increased investment in the RandD of FRAM. Some of the leading vendors in the market such as Ramtron, Texas Instruments, and Fujitsu have increased their investment in the RandD of FRAM. These vendors have identified huge potential in this market, which is motivating them to invest more in RandD. Also, the vendors need to set the proper technology standards, which can be done through an effective RandD process. Thus, the increased investment in the RandD of FRAM will lead to the development of highly efficient products.

One of the major growth drivers is the high demand for FRAM in wireless applications. FRAM is widely used in several types of wireless devices, among which battery-powered wireless sensors are one of the major target products generating significant revenue in the market.

The key vendors dominating this market space are Fujitsu Ltd. and Ramtron International Corp. The other vendors mentioned in the report are IBM Corp., and Texas Instruments Inc. 

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