Skip to main content

GaN Power Devices Market Volume Analysis, size, share and Key Trends 2017-2027

Press Release   •   Feb 23, 2017 23:01 EST

GaN Power Devices Market

With the growing usage of power devices, Gallium Nitrate (GaN) power devices market is significantly growing in various application such as switch mode power supply, monitor control, hybrid battery control and power factor correction controllers. Gallium nitrate is widely adopted to design power devices. Hence, it helps to improve overall efficiency of power conversion in solar grid, wind grid and smart grids.

GaN power devices are used for medium voltage power application which in turn also help to improve power handling capacity and switching. The two major technologies used for the implementation are semiconductor material technology and transistor application technology are used to improve efficiency and reliably of GaN power devices.

GaN Power Devices: Drivers and Challenges

The major driver are significantly growing the market of GaN power devices due to increase in demand for high power transistor application technology and high temperature applications that has led to the increase in usage of GaN industrial devices. These devices are widely used in radio frequency amplifiers, high voltage applications. Due to the ability of gallium nitrate power devices to operate at high frequency, power density, and temperature with improved efficiency and linearity. Since, accelerated improvement in GaN technology and many organizations are coming up with new innovative products which are cost-effective with better design and performance.

Request For Report Sample@ http://www.futuremarketinsights.com/reports/sample/rep-gb-2950 

Such innovations has rapidly increased the demand for GaN power devices in various application areas such as information and communication technology and it plays a vital role in GaN power device market in positive manner. The major restraints faced by GaN power devices market are high initial implementation cost.

GaN Power Devices: Segmentation

Segmentation on the basis of technology:

  • Semiconductor material
  • Transistor application technology

Segmentation on the basis of Wafer:

  • Manufacturing process
  • Wafer size
  • Design configuration

Segmentation on the basis of device:

  • GaN power discrete market
  • GaN power IC market

Segmentation on the basis of product:

  • GaN opto semiconductor
  • GaN power semiconductor

Segmentation on the basis of verticals:

  • Computers
  • Information and communication technology
  • Consumer Electronics
  • Medical
  • Automotive

GaN Power Devices: Regional Overview

Presently, Japan is holding largest market share of GaN power devices by the rise in usage of application and continuous development of semiconductor industry.

The market of GaN power devices witnessing tremendous growth in the region of North America, due to large adoption of high speed switching of GaN power devices.

Request For TOC@ http://www.futuremarketinsights.com/toc/rep-gb-2950 

GaN Power Devices: Key Players

Some of the prominent players of GaN power devices are:Fujitsu Ltd., Toshiba Corp., Koninklijke Philips N.V., Texas Instruments, EPIGAN NV, NTT Advanced Technology Corporation, RF Micro Devices Incorporated, Cree Incorporated, Aixtron SE, International Quantum Epitaxy plc, Mitsubishi Chemical Corporation , AZZURO Semiconductors AG

Future Market Insights (FMI) is a premier provider of syndicated research reports, custom research reports, and consulting services. We deliver a complete packaged solution, which combines current market intelligence, statistical anecdotes, technology inputs, valuable growth insights, aerial view of the competitive framework, and future market trends.

Contact

3rd Floor,
207 Regent Street,
London - W1B 3HH
United Kingdom
T: + 44 (0) 20 7692 8790
D: +44 (0) 20 3287 4268
Email: sales@futuremarketinsights.com
Website: www.futuremarketinsights.com

Comments (0)

Add comment

Comment