Metallic silicide are a kind of ceramic materials with outstanding heat resistance and oxidation resistance properties. Tungsten silicide, being an example of metallic silicide, exhibits the same properties. It is a gray crystalline solid. It is an important material as PVD target for semiconductor-related applications.
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Silicides play a vital role in the field of advanced technology. Thin films of metal silicide are integral to the integrated circuits of semiconductor and microelectronics devices, a superconductor and Schottky barrier used in infrared detection and Schottky contacts. Metallic silicides are usually produced via sputtering deposition of the metal on a high purity silicon wafer.
About 15% of silicides are refined to the purity level needed for electronic applications. High purity level plays an important role in optimum functioning of electronic applications. This is because requirements of microelectronics are high conductivity, thermal and structural stability, and ability to withstand harsh environmental conditions. Tungsten silicide is also used as a barrier layer between silicon and other metals.
Based on application, the tungsten silicide powder market can be segmented into integrated circuits, components, transistors, microelectronics, wafers for semiconductors, barrier layers, and photovoltaics.
North America and Europe, followed by China and Japan in Asia Pacific, are the major regions of the tungsten silicide powder market. North America and Europe are expected to maintain their dominance in the tungsten silicide powder, considering the presence of large number of key players in these regions.
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Key players operating in the tungsten silicide powder market include Japan New Metals Co. Ltd., ESPICorp Inc., Luoyang Tongrun Info Technology Co. Ltd., Stanford Advanced Materials, American Elements, and Materion Corporation.