Widespread Use of GaN-based Devices in Electronics Fuel Market Growth
Introduction of advanced technology and increasing production volumes account for driving the global GaN industrial devices market from suppliers perspective. The growing demand for high power and high temperature applications has led to the rising utilization of GaN industrial devices. These devices are extensively used in radio frequency amplifiers, LEDs, and high voltage applications among others, as they can function at high temperature, high frequency, and high power density with improved efficiency and linearity.
The increasing number of applications of GaN-based devices is augmenting this market’s growth from a demand perspective. This is because gallium nitride presents better performance characteristics in comparison to other semiconductor devices such as gallium arsenide (GaAs) and Silicon (Si). Due to these features, GaN power semiconductors are suitable for high power applications such as power converter circuits and home appliances.
Blossoming economy in developing countries and the development of next-gen hybrid electric vehicles and electric vehicles hold immense opportunities for the development of the GaN industrial devices market. However, high cost of pure gallium nitride is anticipated to restrict its growth in the coming years.
Based on type, the GaN industrial devices market is bifurcated into opto electronics and power devices. Opto electronics comprises laser diodes and light-emitting diodes and this segment held a 78.0% share in the overall market in 2014. Power devices are further broken down into metal oxide semiconductor field effect transistor (MOSFETs), Schottky diode, high electron mobility transistors (HEMTs), and others.
The key applications of GaN HEMTs are wireless phone infrastructure: base stations, V-SAT, defense, WiMAX/LTE, CATV, satellite, and others. Fueled by the increasing number of base transceiver station installations, base stations held the largest share of 26.0% in the overall market in 2014.
Based on application, the GaN industrial devices market is segmented into radiofrequency (RF), power device, and light-emitting diodes (LED). Driven by large-scale usage of GaN industrial devices in traffic signal lamps, vehicle lamps, and liquid crystal lamps, LED emerged as the leader in terms of both value and volume. The LED segment accounted for 68.0% of the market in terms of value and 82.50% in terms of volume in 2014.
Based on geography, the global GaN industrial devices market is divided into five key regions: Europe, Asia Pacific, North America, Latin America, and the Middle East and Africa.
Transparency Market Research, in its latest report, indicates that the GaN industrial devices market is fueled by the introduction of advanced technology, large-scale production, increasing application areas, and the rising demand for improved battlefield performance. The report, titled “GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021”, states that rising at a 15.10% CAGR from 2015 to 2021, the value of the global GaN industrial devices market is anticipated to grow from US$481.8 mn in 2014 to US$1,315 mn by 2021.
Browse the full GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 – 2021 report at http://www.transparencymarketresearch.com/gan-industrial-devices-market.html
The most prominent players operating in the global GaN industrial devices market include RF Micro Devices Inc., Renesas Electronics Corporation, Fujitsu Limited, Texas Instruments Inc., NXP Semiconductors N.V., International Rectifier, Freescale Semiconductor Inc., International Quantum Epitaxy plc., GaN Systems Inc., Nichia Corporation, Toshiba Corporation, Efficient Power Conversion Corporation, and Cree Inc. These players have been profiled in the GaN industrial devices market based on company and financial overview, business strategies, and recent developments.
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