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Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Analyzed Closely in New Market Research Report

Press Release   •   Jan 18, 2018 08:08 EST

This report analyzes and forecasts the market for Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor at the Global and Regional levels. The market has been estimated based on revenue US$ Mn from 2017 to 2023 and forecasts for the sub-segments have also been provided in the report. The study includes impact analysis of the drivers and restraints in the Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market. It also covers the analysis of the trends in demand for Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor during the forecast period.

The report on global insulated gate bipolar transistors and metal oxide field effect transistor market provides qualitative and quantitative analysis for the period of 2015 to 2023. According to report the global insulated gate bipolar transistors and metal oxide field effect transistor market is expected to grow at a CAGR between 12.0% to 12.5% over the forecast period of 2017 - 2023. The global market for insulated gate bipolar transistors and metal oxide field effect transistor was valued at USD 4785.6 million in 2013 and is expected to reach around USD XX billion by 2023.

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Market Insights:

IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.

Segments Covered

The report on Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market covers Segments such as Type, Power ratingand Application. The type segment is bifurcated into discrete IGBT and IGBT modules. The power rating segment includes high power, medium power, and low power IGBTs. Based on application, the market is segment into energy & power, consumer electronics, inverter & UPS, electrical vehicle, industrial system, and others.

Companies Covered

  • Fairchild Semiconductor International Inc.
  • STMicroelectronics N.V.
  • ABB Ltd.
  • Hitachi Power Semiconductor Device Ltd.
  • Toshiba Corporation
  • Mitsubishi Electric Corporation
  • Infineon Technologies AG.

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Key topics covered:

1. Preface

2. Executive summary

3. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market Overview

4. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market Analysis by Type 2017 - 2023

5. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market Analysis, by Power rating 2017 - 2023

6. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market Analysis, by Application 2017 - 2023

7. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market Analysis, by Region 2017 - 2023

8 Companies Covered

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