Join the ROHM Group at APEC 2015 as we showcase our latest power technologies and solutions in 5 key areas: Analog, Discrete, Motor Drivers, PMICs, and SiC.

Event date 15 March 2015 – 19 March 2015

Location Charlotte Convention Center (Booth 209), Charlotte, North Carolina

ROHM, a pioneer in SiC development, offers an expanded lineup of industry-leading SiC devices that provide breakthrough performance, from high voltage SiC MOSFETs and Schottky barrier diodes that provide ultra-low switching loss to a quasi-resonant AC/DC converter designed to drive SiC MOSFETs with high efficiency and low noise.

Categories

  • sic
  • power divices
  • gatedriver
  • rohm
  • semiconductor
  • igbt
  • analog
  • discrete
  • motor drivers
  • pmics

Related content

  • ROHM’s Expanding Lineup of Power Devices

    ROHM is taking advantage of technology cultivated in the consumer electronics sector to actively advance product development for industrial equipment. ROHM leads the industry in all aspects of SiC power devices, from research and development to mass production. In addition to SiC semiconductors, ROHM will continue to offer a complete lineup of power devices for the silicon semiconductor field.

  • ROHM’s gate driver IC with built-in isolator optimal for SiC MOSFET, IGBT and power MOSFET

    In recent years, attention is focused on power electronics mainly in the fields of industrial equipment, renewable energy and expanding widely in automotive-inverters. Under these circumstances, ROHM developed gate drivers with built-in isolator that can maximally utilize performances of SiC, IGBT and power MOSFET by built-in isolators inside the ICs.

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